- Monitoring of photon emission from emitter-base junction of bipolar silicon transistors
   "avalanche light emission"
                                                                            IEEE Trans. Elect. Dev. 46, 1234-39 (1999),  M. de la Bardonnie,
                                                                            D. Jiang, S.E. Kerns, D.V. Kerns, P. Mialhe, J.P. Charles, A. Hoffmann
- Detection of fast neutrons
   "sensitivity of N-MOSFET saturation current on neutron fluence"
                                                                             Microelectronics International  19, 19-22 (2002),
                                                                             C. Salamé, P. Mialhe, J.P. Charles, A. Khoury              
- Development of a silicon IR diode
   "nano-layer degradation to increase recombination processes in silicon devices"
                                                                            Microelectronics International  26, 260-63 (2005), 
                                                                            M. El Tahchi, E. Nassar, P. Mialhe
- Making faster switching-off MOSFET devices
   "defect injection and accumulation of positive charges in the bulk oxide"
                                                                            Microelectronics Reliability 47, 1296-99 (2007),
                                                                            R. Habchi, C. Salamé, A. Khoury, P. Mialhe
- A parameter for reliability evaluation for bipolar transistors
   "evolution of junction parameters during degradation"
                                                                           Microelectronics Reliability 48, 348-53 (2008),
                                                                           W. Tazibt,  P. Mialhe, J.P. Charles, M.A. Belkhir
- New low-cost composite for Energy Harvesting and Storage
             "single - layer photovoltaic devices for the third generation of solar-cells (1 A/m2)"

    - All-silicon optoelectronic devices

             "nano-defect cavity as an optical active layer in silicon microelectronics devices"

                                                                                       European Physical Journal Appl. Phys. 58 (01), 2012, 10103

                                                                                       H. Toufik, W. Tazibt, N. Toufik, M. El Tahchi, F. Pélanchon and P.Mialhe

                                                                                       Europhysicsnews  Vol. 43 No.3 (2012)- Highlights