>Articles

The Evolution of the Substrate Drain Junction Parameters during Electrical Ageing for n-MOS Transistor Characterisation 
                J. of Phys. D: Appl. Phys. 31, 150-56  (1998) 
                M. de la BARDONNIE, P. MIALHE, J.P. CHARLES

On the Aging of Avalanche Light Emission from Silicon Junctions 
                IEEE Trans. Elect. Dev. 46, 1234-39 (1999)   
                M. de la Bardonnie, D. Jiang, S.E. Kerns, D.V. Kerns, P. Mialhe, J.P. Charles, A. Hoffmann

A New Method for the Extraction of Diode Parameters with a Single Exponential Method 
                Active and Passive Elect. Comp.  22, 157-63 (1999) 
                S. Dib, B. AFFOUR, A. KHOURY, P. MIALHE, F. PELANCHON

Junction parameters for silicon devices characterization 
                Microelect. Realiability. 39, 751-53 (1999) 
                M. de la Bardonnie, N. Toufik, C. Salamé, S. Dib, P. Mialhe, A. Hoffmann, J.P. Charles

Light Emission Studies ofTotal Dose and Hot carrier Effects on Silicon Junctions 
                IEEE Trans; on Nucl. Sc. 46, 1804-08 (1999) 
                S. KERNS, D. JIANG, M. de la BARDONNIE, F. PELANCHON, H. BARNABY, D.V. KERNS, R.D. SCHRIMPF, B.L. BHUVA, P. MIALHE, A. HOFFMANN, J.P. CHARLES

Analyse Electrique et optique des Effets Induits par Neutrons (30 MeV) pour de Faibles Fluences dans des JFETs 
                Proc. 5th Europ. Conf. RADECS'99 13-17 sept. 1999 Fontevraud (France), Oral NO1 
                A. HOFFMANN, J.P. CHARLES, S. KERNS, D.V. KERNS, M. de la BARDONNIE, P. MIALHE

Junction Parameters for Silicon Devices Characterization 
                10th Europ. Symposium ESREF 99, 5-8 oct. (1999), Bordeaux (France) (oral) 
                M. de la Bardonnie, N. Toufik, S. Dib, P. Mialhe           

Optical Evidence of damage Localization in Irradiated and Hot-Carrier-Stressed BJTs 
                Proc. 5th Europ. Conf. RADECS'99,  Sept. 13-17 (1999) Fontevaud (France) 
                S. KERNS, D.V. KERNS, D. JIANG, R.D. SCHRIMPF, H. BARNABY, M. de la BARDONNIE, P. MIALHE,  A.HOFFMANN, J.P. CHARLES

Size Effects on SEB Cross-Section of VDMOSFETs 
                Radiation Effects and Defects in Solids 152, 191-200 (2000) 
                C. Salamé, A. Hoffmann, P. Mialhe, J.P. Charles, D. Kerns, S. Kerns

Effects of Low Dimensions on Junction Parameters of MOS Devices 
                J. Mat. Sc and Eng. B: 74, 286-89 (2000) 
                M. de la Bardonnie, A. Khoury, N. Toufik, M. El-Tachchi, F. Pelanchon, P. Mialhe

Determination of Interfacial Dynamic Velocity in Solar Cells 
                Solar Energy Material and Solar Cells 63, 101-115 (2000) 
                B. AZAR, M. de la Bardonnie , J. FARAH, A. KHOURY, F. PELANCHON, P. MIALHE

Degradation of the Diode Ideality Factor of Silicon n-p Junctions 
                Solar Energy Material and Solar Cells 62, 393-98 (2000)  
                M. EL-TAHCHI, A. KHOURY, M. de La BARDONNIE, P. MIALHE, F. PELANCHON

La Jonction, du Solaire à la Microélectronique

                Revue Energ. Ren. 3, 1-16 (2000)

               J. P. Charles, A. Haddi, A. Maouad, H. Bakhtiar, A. Zerga, A. Hoffmann, P. MialHE

Effect of Charge Distribution on Burnout Threshold of Hardened Power MOSFET
               Europ. Space Comp. Conf., March 20-24 (2000), ESA, Noordwijk, the Netherlands (oral)       
                  C. Salamé, S. Kerns, D.V. Kerns, F. Pélanchon, P. Mialhe, A. Hoffmann, J.P. Charles

Fabrication of tin oxide (SnO₂) thin film by electrostatic spray pyrolysis.

               Microelectronic Engineering, 51-52, 627-631 (2000).

               D.ZAOUK, Y.ZAATAR, A.KHOURY, C.LLINARES, J.P.CHARLES and J.BECHARA

Electrical and Optical Analyses of Low Fluence Fast Neutron damage to JFETs   
              IEEE Proc. Conf. on Radiation and its Effects on Comp. and Systems, (2000 ), (oral NO1)        
              A. Hoffmann, J.P. Charles, S.E. Kerns, D. Kerns, M. de la Bardonnie, P. Mialhe

Characterisation of Ionizing Radiations Effects in MOS Structures by Bipolars Operation Study   
             IEEE Proc. Conf. on Radiation and its Effects on Comp. and Systems, (2000 ), (affiche NP10) 
             H. Bakhtiar, C. Picard, C. Brisset, A. Hoffmann, P. Mialhe, J.P. Charles

Degradation of the ideality factor of silicon n-p solar cells  
            16th European Photo. Solar Energy Conf., 1-5 may 2000 Glasgow (UK) – affiche -  
            M. EL-TAHCHI, A. KHOURY, F. PELANCHON, P. MIALHE

Effect of an electrical stress on npn transistor parameters  
           3rd Symposium SiO2 and Advanced Dielectrics, 19-21 juin 2000 Futeau (Aix Marseille) (France)  
           N. TOUFIK, F. PELANCHON, P. MIALHE

A Study of a Solar Cell With an Implanted Defect Layer  
           Med. Conf. for Env. and Solar, COMPLES2'k, 16th-17th Nov. 2000, Beirut (Lebanon) Proc. IEEE 2001, 00EX493, pp269-73  
           M. El-Tahchi, N. Toufik, M. Ajaka, A. Khoury, F. Pelanchon and P. Mialhe          

VDMOSFET Model Parameter Extraction Based on Electrical and Optical Measurements  
          Microelectronics Journal-32, 599-603 (2001)  
             C. Salame, P. Mialhe, J-P. Charles

Effects of the pre-neutron irradiation on VDMOSFET sensitivity to heavy ions 
          Microelectronics International. 16, 16-20 (2001)     
              C. Salame, A. Hoffmann, F. PELANCHON, P. Mialhe, J-P. Charles

Degradation of junction parameters of an elctrically stressed npn bipolar transistor  
              Active and Passive Elect. Comp. 24, 155-63 (2001)  
              N. Toufik, F. Pélanchon, P. Mialhe

Characterisation of Defects traps in SiO2 Thin films   
              Active and. Passive Elec. Comp. 24, 169-75 (2001)  
              J.Y. ROSAYE, P. MIALHE, J.. CHARLES, M. SAKASHITA, H. IKEDA, A. SAKAI, S. ZAIMA, Y. YASUDA

Implanted Layer and Carrier Confinement for Very High Efficiency Silicon Solar Cells  
17th European Photovoltaic Solar Energy Conference Munich, Germany 22-26 oct. 2001, VA1.12  
             F. Pélanchon, M. El-Tahchi, N. Toufik, A. Khoury, P. Mialhe           

Analyzing Dark I-V Characteristics For Improve GaAs Solar Cells Performance  
            17th European Photovoltaic Solar Energy Conference Munich, Germany 22-26 oct. 2001, VA1.9  
                M. El-Tahchi, E. Aperathitis, F. Pélanchon, F. Scholz, K. Zieger, A. Khoury, P. Mialhe

Charge Deposited by Heavy Ion on SEB Threshold of Hardened Power MOSFET  
            5th Europ. CMSE-Commercialisation Military and Space Electronics Conference and Exhibition,

            17-20 Sept. 2001, Nice (France) pp 258  
            C. Salamé, P. Mialhe, A. Khoury, A. Hoffmann, J.P. Charles           

A new junction parameters determination using the double exponential model 
            Active passive Elect. Comp.25, 225-232 (2002) 
            S. Dib, A. Khoury, F. Pelanchon, P. Mialhe

N-channel power MOSFET for fast neutron detection 
             Microelectronic International 19, 19-22 (2002)               
             C. Salamé, P. Mialhe, J.P. Charles, A. Khoury           

Carrier traps and dégradation in SiO2 thin films      
                 Microelectronics. Journal. 33, 429 (2002) 
                J.-Y. Rosaye, N. Kurumado, M. Sakashita, H. Ikeda, A. Sakai, P. Mialhe, J-P. Charles, S. Zaima,

                Y. Yasuda, and Y. Watanabe          

New Modelling Method for Forward Junction I-V Analysis      
             J. Phys.D: Appl. Phys. 35, 487-491 (2002)  
                  M. El-Tahchi, N. Toufik, F. Pelanchon, M. Ajaka, A. Khoury and P. Mialhe

Degradation of light emitting silicon junction of a bipolar transistor 
                Journal of Electron Devices, 1,  7-9 (2003) 
                N. Toufik, F. Pélanchon and P. Mialhe

Defect evolutions with different temperature injections in MOSFETs   
                Microelectronic International, 20, 24-31 (2003) 
                J.-Y. Rosaye, J.-P. Charles and P. Mialhe

Fast and slow-state traps at the MOSFET oxide interface with a temperature dependent C-V method 
                Journal of Electron Devices, 1, 1-6 (2003) 
                J.-Y. Rosaye, P. Mialhe, J.-P. Charles, Y. Yasuda and Y. Watanabe

Junction parameter extraction for electronic device characterization 
                Active Passive Elect. Comp., 27, 61-67 (2004) 
                S. Dib, C. SALAME, N. TOUFIK, A. Khoury, F. Pelanchon, P. Mialhe

Parameters Degradation of VDMOSFETs During Operation Under Natural Stress         
                J. Elec. Dev. , 2 (2004), 51-57 
                W. TAZIB, R. HABCHI, B. NSOULI, C. SALAME, P. MIALHE, A. KHOURY.

Dark I-V Characteristics for the Knowledge of Carrier Transport Processes in Solar Cells 
                19th Europ. Photovoltaic Solar Energy Conf. Paris, France 7-11 juillet 2004, 1AV.2.1 
                M. El-Tahchi, E. Aperathitis, A. Khoury, P. Mialhe

Study and Development of a Silicon Infrared Diode Operating Under Forward Bias 
                LDSD2004 – 5^th Int. Conf. on Low Dimensional Structures and Devices.,  
                Cancun-Mexico 12-17 December 2004, Abstract 74 
                M. El-Tahchi, E. Nassar, P. Mialhe

C-V and C-P Characterization Sensitivity for Fast and Slow-State Traps in Very Thin MOSFETs 
                Reliability Physics Symposium, April 25-29 (2004), IEEE 04CH37533 
                J.V. ROSAYE, Y. YASUDA, A. SAKAI, P. MIALHE, J.P. CHARLES, Y. WATANABE

New Evolution for Interface and Oxyde Defects in Very Thin MOSFETs. 
                5th Symposium "SiO2, Advanced Dielectrics & Related Devices" 
                June 21-23 (2004), Chamonix Mont Blanc, France, PG-5 
                J.-Y. Rosaye, P. Mialhe, J.-P. Charles, A. HOFFMAN, D. ZANDER           

A Faster Power MOSFET Device with Electrical Stress Treatment 
                Microelectronics International 22, 35-41 (2005) 
                C. SALAME, R. HABCHI, W. TAZIBT, A. KHOURY, P. MIALHE

Study and development of a silicon infrared diode operating under forward bias 
                Microelectronic Journal 36, 260-63 (2005) 
                M. El Tahchi, E. Nassar, P. Mialhe

Reliability of microelectronic devices from emitter-base junction characterisation 
                AMSE  Modelling, Measurement and Control,A78, 65-76 (2005)
                W. TAZIBT, N. TOUFIK, C.SALAME, P. MIALHE, M.A. BELKHIR

Dependency of Oxide Thickness Effect on the Evolution of n-MOSFET Switching time with Electrical Stress  
                2005 MAPLD International Conf., Washington USA, Sept. 7-9 2005 ,  C. Salamé, R. Habchi, A. Khoury, P. Mialhe  

Dark I-V Characteristic For The Determination of Carrier Transport Processes in Solar Cells
                20^th Europ Photov. Solar Energy Conf., Barcelona Spain, 6-10 June 2005, IAV.2.5, 76  
                H. Toufik, R. Habchi, M. El Tahchi, A. Khoury, P. Mialhe"

Temperature dependence of silicon power MOSFETs switching parameters
                Microelectronics International 23, 1356-62 (2006)  
                R. HABCHI, C. SALAME, B. NSOULI, P. MIALHE

Temperature dependence of a silicon power device switching parameters
                Appl. Phys. Letters 88, 153503 (2006) 
                R. HABCHI, C. SALAME, A. KHOURY, P. MIALHE

Simple parameter extraction method for illuminated solar cells
               Solid-State Electronics 50, 1234-37 (2006) 
               M. Chegaar, G. Azzouzi, P. Mialhe

Relatively high radiative quantum efficiency from forward biased silicon pn junction: IR emission
                5ème C.F.L.S.M 17-19 mai 06, Beyrouth, Liban  
                H. Toufik, N. Jamal Eddine, M. Bassil,  M. El Tahchi, P. Mialhe

A new theoretical model and experimental set-up for visible emission from a reversed-biased silicon pn junction
                5ème C.F.L.S.M 17-19 mai 06, Beyrouth, Liban   
                N. Jamal Eddine, H. Toufik, M. Bassil, M. El Tahchi, P. Mialhe"

A Carriers tempertaure for an operating silicon p-n junction
                Microelectronics Journal 38, 615-19 (2007)
                M.H. Boukhatem, M. El Tahchi, G.W. El Haj Moussa, M. Ajaka, A. Khoury,  P. Mialhe

Hot carrier injection in VDMOSFET for improvement of commutation process
                Microelectronics International 24, 1356-62 (2007)
                R. El Bitar, C. Salamé,  P. Mialhe

Switching times variation of power MOSFET devices after electrical stress
                Microelectronics Reliability 47, 1296-99 (2007)  
                R. HABCHI, C. SALAME, A. KHOURY, P. MIALHE

The Carriers tempertaure as a new parameter for characterization
                IEEE Signals, systems and Electronics, Aug 2, 363-365, (2007)
                M.H. Boukhatem, M. El Tahchi, P. Mialhe

 Switching times variation of MOSFET devices with temperature and high-field stress
                Microelectronics Journal  39, 828-31 (2008)
                R. HABCHI, C. SALAME, R. El BITAR, P. MIALHE

 A junction characterisation for microelectronic devices quality and reliability
                Microelectronics Reliability, 48, 348-53 (2008)                    
                W. Tazibt,  P. Mialhe, J.P. Charles, M.A. Belkhir

      Switching times variation of MOSFET devices with temperature and high-field stress

                     Microelectronics Journal, 39, 828-831 (2008)

                R. Habchi, C. Salame,

  Silicon for optoelectronic
                J. Electron Dev. 6, 170-173 (2008)                 
                P. Mialhe, H. Toufik, M. El Tahchi, N. Toufik, W. Tazibt

Hot carrier Injection from the integrated drain-source junction in VDMOSFET
                First International Eng. Sciences Conf., IESC'08, Aleppo (Syria), 2-4 Nov. 2008
                R. El Bitar, R. Habchi, C. Salamé, A. khoury, P. Mialhe

Silicon MOSFET devices electrical parameters evolution at high temperatures

               Microelectronics International, 25, 1, (2008)

                     C. Salame, R. Habchi

Enhancing the magnetoelectric response of Metglas/polyvinylidene fluoride laminates by exploiting the flux concentration effect.

                     Z. Fang, S. G. Lu, F. Li, S. Datta, Q. M. Zhang, and M. El Tahchi.

                    Appl. Phys. Lett., 95, 112903 (2009).

High injection effect and the minority carrier distribution

                    Engineering Science Series res. J. of Aleppo Univ. 68, (2009)

                    K. Al-AAbdullah, A.A. Fares, P. Mialhe, B. Albakour

Study for the electrical quality degradation of N-channel VDMOSFET transistor induced by electrical stress
                   IEEE, ACTEA, 10, 1109, 142-145 (2009)         
                   N. Abdoul, C. Salamé, A. Khoury, A. Foucaran, A. Hoffmann, P. Mialhe

VDMOSFET reliability dependence on the integrated drain-source junction
                Microelectronics International  26, 33-36 (2009)         
                 R. El Bitar, R. Habchi, C. Salamé, A. Khoury, P. Mialhe, B. Nsouli

Influence of depletion region recombination current on performance of solar cell under sunlight concentration.

                    Engineering Science Series res. J. of Aleppo Univ. 82, (2010)

                    K. Al-AAbdullah, A.A. Fares, P. Mialhe, B. Albakour

Reliability for selection of microelectronic devices
                J. Electron Dev. 8, 275-281 (2010)                 
                W. Tazibt, P. Mialhe

Molecular Dynamics in Smart Hydrogel Systems.

                     M. Bassil, Roland Habchi, Michael Ibrahim, Joel Davenas, Gisèle Boiteux and Mario El Tahchi.

                    Journal of Non-Crystalline Solids, 356, 754–756 (2010).

Comparative study between zinc oxide elaborated by spray pyrolysis, electron beam evaporation and rf magnetron techniques.

                    Phys.Status Solidi A, 1-5 (2010)

                    A. KHOURY, R. Al ASMAR, M. ABDALLAH, G. El HAJJ MOUSSA, A. FOUCARAN

       Detection of traps induced and activated by high field stress in an N-channel VDMOSFET transistor

       using current deep level transient spectroscopy.

            Microelectronics Engineering 88, 3333-3337 (2011).

                    N. Abboud, Y. Cuminal, A. Foucaran and C. Salame

2.             Evaluation of the electrical properties under extreme stress in photovoltaic solar modules

                                   Microelectronics International, 28 , 12-16 (2011).

                                   J. Sidawi, N. Abboud, R. Habchi and C. Salamé

Fusion power for the future

La fusion nucléaire comme nouvelle source d'énergie

                    Revue Internationale d'Héliotechnique Energie-Environnement 43, I-IV (2011)

                    P. Mialhe

3.         Temperature effect on N-channel commercial VDMOSFET transistor

                   Phys. Status Solidi C 8, 875-878 (2011).

           N. Abboud, C. Salame, Y. Cuminal, A. Foucaran and A. Hoffmann

Magnetic properties of hematite nanotubes elaborated by electrospinning process

                   J. Phys. Chem. C, 115, 17643-17646 (2011)

                   EID  C., LUNEAU D., SALLES V., ASMAR  R., MONTEIL Y., KHOURY A., BRIOUDE  A.

Influence of depletion region recombination current on performance of solar cell under sunlight concentration.

                    The energy Procedia Journal (Elsevier-Science Direct)  6, 36-45 (2011)

                    K. Al-AAbdullah, A.A. Fares, P. Mialhe, B. Albakour

Polyaniline-titania self-assembled solid electrolyte for new generation photovoltaic single-layer devices.

                Materials Chemistry and Physics, 113, pp 1040 – 1049 (2012)

                Michael Ibrahim, Maria Bassil, Umit Demirci, Tony Khoury, Georges El Haj Moussa, Mario El Tahchi and Philippe Miele.

Determination of carrier temperature from junction I(V) measurements

                   J. Electron. Dev. 15, 1269-1273 (2012)

                   Mohamed H. Boukhatem, Mario El Tahchi, Pierre Mialhe

High carrier injection for all-silicon laser

                   European Physical Journal Appl. Phys. 58 (01), 2012, 10103

                   H. Toufik, W. Tazibt, N. Toufik, M. El Tahchi, F. Pélanchon and P.Mialhe

0ptical active layer inside silicon devices

                    Europhysics News ( 2012  Issue 43/3)_HIGHLIGHTS

Innovative prototype of a zinc-oxide based optical gas sensor

                  Sensors and actuators B: chemical 173, (2012) 391-395

                  Sami Youssef, Jean Podlecki, Roland Habchi, Marwan Brouche, Alain Foucaran,      

                  David Bouvier, Nicolas Brillouet, Paul Coudray

Studying of Natural Dyes Properties as Photo-Sensitizer for Dye Sensitized Solar Cells (DSSC)

                    Journal of Electron Devices, Vol. 16, 2012, pp. 1369-1381

                    Mounir Alhamed, Ahmad S. Issa, A. Wael Doubal

Semiconductors Elaboration / ZnO Based Varistors for Improving of Stability and Reliability of Electrical Systems

Applications by Using the Rare-Earths.

                    The Energy Procedia Journal (Elsevier-Science Direct)  19, 1-14 (2012)

                    K. Al-AAbdullah,  B. Al-Bakour

Heat and mass transfer investigation of rotating hydrocarbons droplet which behaves as a hard sphere

                    Applied Mathematical Modelling 36, 2935-2946 (2012)

                    J. Ggheim, M. Abdallah, R. Habchi, Z. Zakhi

Structural and optical properties of Cu₂ZnSnO₄ thin film prepared by dip coating Sol-Gel

                    Journal of Electron Devices, Vol. 18, 2013, pp. 1563-1567

                    Mounir Alhamed,  Wael Abdoullah

Electrospray deposition and characterization of cobalt oxide thin films

                    Materials Science in Semiconductor Processing 24, 57-61 (2014)

                    O. Kilo, J. Jabbour, R. Habchi, N. Abboud, M. Brouche, A. Khoury, D. Zaouk

Investigation of the Monocrystalline Silicon Solar Cell Physical Behavior after Thermal Stress by AC Impedance Spectra

                    Energy Procedia 50, 30-40 (2014)

                    K. Al Abdullah, Faisal Alloush, C. Salamé

Studying the optimal performance of the ZnO-based varistors using artificial intelligence techniques

                    Journal of Electron Devices, 19, 1637-1641 (2014)

                    Mohammed AL Mohammed, Khalaf AL Abdullah, Fuad AL Haj Omar

______________________________________________________________________________

PV panels operating under stressed conditions
                21st Europ. Photo. Solar Energy Conf., Messe Dresden, 4-8 Sept. 2006, 5BV.3.24
                G. Azzouzi, W. Tazibt, M. Salmi, P. Mialhe, M. Chegaar

The carriers temperature as a new parameter for characterization
                21st Europ. Photo. Solar Energy Conf., Messe Dresden, 4-8 Sept. 2006, 1 BV.2.13
                M. Boukhatem, H. Toufik, M. El-Tahchi, A. Khoury, P. Mialhe

Mise à jour: 22/02/16