>Articles
The
Evolution of the Substrate Drain Junction Parameters during Electrical
Ageing for n-MOS
Transistor Characterisation
J. of Phys. D: Appl. Phys. 31,
150-56 (1998)
M. de la BARDONNIE, P. MIALHE, J.P. CHARLES
On
the Aging of Avalanche Light Emission from Silicon Junctions
IEEE Trans. Elect. Dev. 46, 1234-39 (1999)
M.
de la Bardonnie, D. Jiang, S.E. Kerns, D.V. Kerns, P. Mialhe, J.P.
Charles, A. Hoffmann
A
New Method for the Extraction of Diode Parameters with a Single
Exponential Method
Active and Passive Elect. Comp.
22, 157-63 (1999)
S. Dib, B. AFFOUR, A.
KHOURY, P. MIALHE, F. PELANCHON
Junction
parameters for silicon devices characterization
Microelect. Realiability. 39,
751-53 (1999)
Light
Emission Studies ofTotal Dose and Hot carrier Effects on Silicon
Junctions
IEEE Trans; on Nucl. Sc. 46, 1804-08 (1999)
S. KERNS, D. JIANG, M.
de la BARDONNIE, F. PELANCHON, H.
BARNABY, D.V. KERNS,
Analyse
Electrique et optique des Effets Induits par Neutrons (30 MeV) pour de
Faibles Fluences dans des JFETs
Proc. 5th Europ. Conf. RADECS'99 13-17 sept. 1999
Fontevraud (France), Oral NO1
A. HOFFMANN, J.P. CHARLES,
S. KERNS, D.V. KERNS, M. de la BARDONNIE,
P. MIALHE
Junction
Parameters for Silicon Devices Characterization
10th Europ. Symposium ESREF 99, 5-8 oct. (1999),
Bordeaux (France) (oral)
M. de la Bardonnie, N.
Toufik, S. Dib, P. Mialhe
Optical
Evidence of damage Localization in Irradiated and Hot-Carrier-Stressed
BJTs
Proc. 5th Europ. Conf.
RADECS'99, Sept. 13-17
(1999) Fontevaud (France)
S. KERNS, D.V. KERNS, D. JIANG, R.D. SCHRIMPF, H. BARNABY, M. de
la BARDONNIE,
2000
- 2002
Size
Effects on SEB Cross-Section of VDMOSFETs
Radiation Effects and Defects in Solids 152,
191-200 (2000)
C.
Salamé, A. Hoffmann, P. Mialhe, J.P. Charles, D. Kerns, S. Kerns
Effects
of Low Dimensions on Junction Parameters of MOS Devices
J. Mat. Sc and Eng. B: 74, 286-89 (2000)
M. de la Bardonnie,
A. Khoury, N. Toufik, M. El-Tachchi, F. Pelanchon, P. Mialhe
Determination
of Interfacial Dynamic Velocity in Solar Cells
Solar Energy Material and Solar Cells 63,
101-115 (2000)
B. AZAR, M. de la Bardonnie
, J. FARAH, A. KHOURY, F. PELANCHON, P. MIALHE
Degradation
of the Diode Ideality Factor of Silicon n-p Junctions
Solar Energy Material and Solar Cells 62,
393-98 (2000)
M. EL-TAHCHI, A. KHOURY, M. de La
BARDONNIE, P. MIALHE, F. PELANCHON
Effect
of Charge Distribution on Burnout Threshold of Hardened Power
MOSFET
Europ.
Space Comp. Conf., March 20-24 (2000), ESA, Noordwijk, the Netherlands
(oral)
C. Salamé, S. Kerns, D.V. Kerns, F. Pélanchon,
P. Mialhe, A. Hoffmann, J.P. Charles
Electrical
and Optical Analyses of Low Fluence Fast Neutron damage to
JFETs
IEEE Proc. Conf. on Radiation and its Effects on Comp. and
Systems, (2000 ), (oral NO1)
A. Hoffmann, J.P. Charles,
S.E. Kerns, D. Kerns, M. de la Bardonnie,
P. Mialhe
Characterisation
of Ionizing Radiations Effects in MOS Structures by Bipolars Operation
Study
IEEE Proc. Conf. on Radiation and its Effects on Comp. and
Systems, (2000 ), (affiche NP10)
H. Bakhtiar, C. Picard, C. Brisset, A. Hoffmann, P. Mialhe, J.P.
Charles
Degradation
of the ideality factor of silicon n-p solar cells
16th
European Photo. Solar Energy Conf., 1-5 may 2000 Glasgow (UK) –
affiche -
M.
EL-TAHCHI, A. KHOURY, F. PELANCHON, P. MIALHE
Effect
of an electrical stress on npn transistor parameters
3rd
Symposium SiO2 and Advanced Dielectrics, 19-21 juin 2000 Futeau (Aix
Marseille) (France)
N.
TOUFIK, F. PELANCHON, P. MIALHE
A
Study of a Solar Cell With an Implanted Defect Layer
Med.
Conf. for Environnement and Solar, COMPLES2'k, 16th-17th Nov. 2000,
Beirut (Lebanon)
M. El-Tahchi, N. Toufik, M. Ajaka, A. Khoury, F. Pelanchon and P. Mialhe
VDMOSFET
Model Parameter Extraction Based on Electrical and Optical Measurements
Microelectronics
Journal-32, 599-603 (2001)
C. Salame, P. Mialhe, J-P. Charles
Effects
of the pre-neutron irradiation on VDMOSFET sensitivity to heavy ions
Microelectronics International. 16,
16-20 (2001)
C. Salame, A.
Hoffmann, F. PELANCHON, P. Mialhe, J-P. Charles
Degradation
of junction parameters of an elctrically stressed npn bipolar transistor
Active
and Passive Elect; Comp. 24,
155-63 (2001)
N. Toufik, F. Pélanchon,
P. Mialhe
Characterisation
of Defects traps in SiO2 Thin films
Active
and. Passive Elec. Comp. 24,
169-75 (2001)
J.Y. ROSAYE, P. MIALHE, J.. CHARLES, M. SAKASHITA, H. IKEDA, A. SAKAI, S.
ZAIMA, Y. YASUDA
Implanted
Layer and Carrier Confinement for Very High Efficiency Silicon Solar
Cells
17th
European Photovoltaic Solar Energy Conference Munich, Germany 22-26 oct.
2001, VA1.12
F. Pélanchon, M. El-Tahchi, N. Toufik, A. Khoury, P. Mialhe
Analyzing
Dark I-V Characteristics For Improve GaAs Solar Cells Performance
17th
European Photovoltaic Solar Energy Conference Munich, Germany 22-26 oct.
2001, VA1.9
M. El-Tahchi, E. Aperathitis, F. Pélanchon,
F. Scholz, K. Zieger, A. Khoury, P. Mialhe
Charge
Deposited by Heavy Ion on SEB Threshold of Hardened Power MOSFET
5th
Europ. CMSE-Commercialisation Military and Space Electronics Conference
and Exhibition, 17-20 Sept. 2001, Nice (France) pp 258
C. Salamé, P. Mialhe, A. Khoury, A. Hoffmann, J.P. Charles
A
new junction parameters determination using the double exponential model
Active passive Elect. Comp.25,
225-232 (2002)
S. Dib, A. Khoury, F.
Pelanchon, P. Mialhe
N-channel
power MOSFET for fast neutron detection
Microelectronic International 19, 19-22 (2002)
C. Salamé, P. Mialhe, J.P. Charles, A. Khoury
Carrier
traps and dégradation in SiO2 thin films
Microelectronics. Journal. 33,
429 (2002)
J.-Y. Rosaye, N. Kurumado,
M. Sakashita, H. Ikeda, A. Sakai, P. Mialhe,
New
Modelling Method for Forward Junction I-V Analysis
J.
Phys.D: Appl. Phys. 35,
487-491 (2002)
M. El-Tahchi, N. Toufik, F. Pelanchon, M. Ajaka, A. Khoury and P. Mialhe
2003 - 2004
Degradation of light emitting silicon junction of a bipolar transistor
Journal of Electron Devices, 1 (2003) 7-9 (2003)
N. Toufik, F. Pélanchon
and P. Mialhe
Defect
evolutions with different temperature injections in MOSFETs
Microelectronic. International., Microelect;inter,nal 20 (2003)
24-31
J.-Y. Rosaye, J.-P.
Charles and P. Mialhe
Fast
and slow-state traps at the MOSFET oxide interface with a temperature
dependent C-V method
Journal of Electron Devices, 1 (2003) 1-6 (2003)
J.-Y. Rosaye, P. Mialhe,
J.-P. Charles, Y. Yasuda and Y. Watanabe
Junction
parameter extraction for electronic device characterization
Active Passive Elect. Comp.27,
61-67 (2004)
S. Dib, C. SALAME, N.
TOUFIK, A. Khoury, F. Pelanchon, P. Mialhe
Parameters
Degradation of VDMOSFETs During Operation Under Natural Stress
J. Elec. Dev. , 2 (2004), 51-57
W. TAZIB, R. HABCHI, B. NSOULI, C. SALAME, P. MIALHE, A. KHOURY.
Dark
I-V Characteristics for the Knowledge of Carrier Transport Processes in
Solar Cells
19th Europ.
Photovoltaic Solar Energy Conf. Paris, France
7-11 juillet 2004, 1AV.2.1
M. El-Tahchi, E. Aperathitis, A. Khoury, P. Mialhe
Study
and Development of a Silicon Infrared Diode Operating Under Forward Bias
LDSD2004 – 5th Int. Conf. on Low Dimensional
Structures and Devices.,
Cancun-Mexico 12-17 December 2004, Abstract 74
M. El-Tahchi, E. Nassar, P. Mialhe
C-V
and C-P Characterization Sensitivity for Fast and Slow-State Traps in
Very Thin MOSFETs
Reliability Physics Symposium, April 25-29 (2004), IEEE 04CH37533
J.V. ROSAYE, Y. YASUDA, A. SAKAI, P. MIALHE, J.P. CHARLES,
Y. WATANABE
New
Evolution for Interface and Oxyde Defects in Very Thin MOSFETs.
5th Symposium "SiO2, Advanced Dielectrics & Related
Devices"
June 21-23 (2004), Chamonix Mont
Blanc, France, PG-5
J.-Y.
Rosaye, P. Mialhe, J.-P. Charles, A. HOFFMAN, D. ZANDER
2005
A
Faster Power MOSFET Device with Electrical Stress Treatment
Microelectronics International 22, 35-41 (2005)
C. SALAME, R. HABCHI, W. TAZIBT, A. KHOURY, P. MIALHE
Study
and development of a silicon infrared diode operating under forward bias
Microelectronic Journal 36, 260-63
(2005)
M. El Tahchi, E. Nassar, P. Mialhe
Reliability
of microelectronic devices from emitter-base junction characterisation
AMSE Modelling,
Measurement and Control,A78,
65-76 (2005)
W. TAZIBT, N. TOUFIK, C.SALAME, P. MIALHE, M.A. BELKHIR
Dependency of Oxide Thickness Effect on the Evolution of n-MOSFET Switching time
with Electrical Stress
2005 MAPLD International Conf., Washington USA, Sept. 7-9 2005
,
C. Salamé, R. Habchi, A. Khoury, P. Mialhe
Dark I-V Characteristic For The Determination of Carrier
Transport Processes in Solar Cells
20th
Europ Photov. Solar Energy Conf., Barcelona
Spain, 6-10 June 2005, IAV.2.5, 76
H. Toufik, R. Habchi,
M. El Tahchi,
A. Khoury,
P. Mialhe"
2006 ......
Temperature dependence of silicon power MOSFETs switching parameters
Microelectronics International 23, 1356-62 (2006)
R. HABCHI, C. SALAME, B. NSOULI, P. MIALHE
Temperature dependence of a silicon power device switching parameters
Appl. Phys. Letters 88, 153503 (2006)
R. HABCHI, C. SALAME, A. KHOURY, P. MIALHE
Simple parameter extraction method for illuminated
solar cells
Solid-State
Electronics 50, 1234-37 (2006)
M. Chegaar, G. Azzouzi, P. Mialhe
Relatively high radiative quantum efficiency from
forward biased silicon pn junction: IR emission
5ème C.F.L.S.M 17-19 mai 06, Beyrouth, Liban
H. Toufik, N. Jamal Eddine, M. Bassil, M. El Tahchi,
P. Mialhe
A new theoretical model and experimental set-up for
visible emission from a reversed-biased silicon pn junction
5ème C.F.L.S.M 17-19 mai 06, Beyrouth, Liban
N. Jamal Eddine,
H. Toufik, M. Bassil,
M. El Tahchi,
P. Mialhe"
2007 ......
A Carriers tempertaure for an operating silicon p-n junction
Microelectronics Journal 38, 615-19 (2007)
M.H. Boukhatem, M. El Tahchi, G.W. El Haj Moussa,
M. Ajaka, A. Khoury,
P. Mialhe
Hot carrier injection in VDMOSFET for improvement of commutation process
Microelectronics International 24, 1356-62 (2007)
R. El Bitar, C. Salamé,
P. Mialhe
Switching times variation of power MOSFET devices after electrical
stress
Microelectronics Reliability 47, 1296-99 (2007)
R. HABCHI, C. SALAME, A. KHOURY, P. MIALHE
The
Carriers tempertaure as a new parameter for characterization
IEEE Signals, systems and Electronics, Aug 2,
363-365, (2007)
M.H. Boukhatem, M. El Tahchi,
P. Mialhe
2008 ......
Switching times
variation of MOSFET devices with temperature and high-field stress
Microelectronics Journal 39, 828-31 (2008)
R. HABCHI, C. SALAME, R. El BITAR, P. MIALHE
A
junction characterisation for microelectronic devices quality and
reliability
Microelectronics Reliability, 48, 348-53 (2008)
W. Tazibt,
P. Mialhe, J.P. Charles, M.A. Belkhir
Silicon for
optoelectronic
J. Electron Dev. 6, 170-173 (2008)
P. Mialhe, H. Toufik, M. El Tachi, N. Toufik, W. Tazibt
Hot carrier Injection from the integrated drain-source junction in
VDMOSFET
First International Eng. Sciences Conf., IESC'08,
Aleppo (Syria), 2-4 Nov. 2008
R. El Bitar, R. Habchi, C. Salamé, A. khoury, P. Mialhe
2009 ......
Study for the electrical quality
degradation of N-channel VDMOSFET transistor induced by electrical stress
IEEE, ACTEA, 10, 1109, 142-145 (2009)
N. Abdoul, C. Salamé, A. Khoury,
A. Foucaran, A. Hoffmann, P. Mialhe
VDMOSFET reliability dependence on the integrated drain-source junction
Microelectronics
International 26, 33-36 (2009)
R. El Bitar, R. habchi, C. salamé, A. Khoury, P. Mialhe, B.
Nsouli
______________________________________________________________________________
à
paraître:
PV panels operating under stressed conditions
21st Europ. Photo. Solar Energy Conf., Messe Dresden, 4-8 Sept.
2006, 5BV.3.24
G. Azzouzi, W. Tazibt, M. Salmi, P. Mialhe, M. Chegaar
The carriers temperature as a new parameter for characterization
21st Europ. Photo. Solar Energy Conf., Messe Dresden, 4-8 Sept.
2006, 1 BV.2.13
M. Boukhatem, H. Toufik, M. El-Tahchi, A. Khoury, P. Mialhe
Last modified: 17/09/09