CURRICULUM VITAE
Name: Roland
Family name: Habchi
Date of birth : 09-08-1979
Place of birth: Deir el Ahmar - Lebanon
Nationality: Lebanese
Address: ELIAUS
Université de Perpignan
52 avenue Paul Alduy
66860 Perpignan cedex
France
Phone number : + 961 3 985843 (Lebanon)
+33 4 68661726 (France)
E-mail : habchi_7@yahoo.fr
- Educational qualifications:
2007 PhD in Engineering science –Microelectronics-, University of Perpignan- France, 25 May 2007.
The thesis is entitled: “Power devices: switching and reliability”
The work involved the study of the switching phenomena of power devices and its degradation with time. A novel experiment was set up to measure the switching speed, witch allowed us to publish the first results that studies the switching behavior as a reliability parameter.
Defects resulting from long time operation and from temperature differences were characterized through a whole set of measurements such as, I(V), C(V), G(V), Ton, Toff,…
Degradation of the oxide, the interface, and the package were considered.
2004-2007 PhD student, University of Perpignan- France
in collaboration with the Lebanese University- Lebanon.
During this period I worked closely with researchers in the Lebanese University when I was sent on several missions to Lebanon in order to install a Microelectronics characterization laboratory in the faculty of sciences of the Lebanese University. The lab was successfully installed.
2003-2004 Masters degree in ‘Material sciences and electronic devices’,
Lebanese University - faculty of science
The final project of my Masters degree was done in the “Laboratoire de Physique Appliquée et d’Automatique (LP2A)” in the University of Perpignan – France. The work concerned the degradation of the transit time of power MOSFET devices subjected to high electric fields.
The project was entitled: “Electric stress effects on transit time of VDMOSFETs power devices.
The resulted article was : “A faster power MOSFET device with electrical stress treatment”. Microelectronics International 22 (2005) 35-37
2002-2003 Teaching diploma in sciences- option: physics
Lebanese University- faculty of science
- Scientific qualifications
The research domain of my thesis is “microelectronics” and “the physics of semiconductors”. The main interest is in MOS structures and its related devices. The work is focused on the reliability of MOS devices, especially those subjected to high electric fields and high temperatures. Interested in the study of defects in semiconductors, oxide-semiconductor interfaces, and packages. In particular the cases involving the transport of energetic particles and tunneling effects.
- Large experience in characterization methods of electronic devices and in experimental measurements of electrical characteristics such as C(V), I(V), G(V), Ton, Toff,… performed on several types of power devices.
- Good knowledge of electron microscopy (SEM), and X ray diffraction.
- Good knowledge of theoretical physics, in particular quantum mechanics and I am also very good in experimental procedures.
- Teaching experience
During my PhD studies I had the chance to teach laboratory courses in electronics, microelectronics, and Physics. I also supervised the final projects of two Master students and two Bachelor students.
- Research interests
Semiconductor physics, micro and nanoelectronics, charge transport, high frequency electronics, device fabrication, reliability tests, electrical and structural characterization, quantum physics in nanostructures, MEMS technologies, biological compatibility.
- Languages spoken and written fluently
French, English, and Arabic.
- Publications
[1] Temperature dependence of a silicon power device switching parameters
R. Habchi, C. Salame, A. Khoury, P. Mialhe
Applied Physics Letters 88, 153503 (2006)
[2] Switching times variation of power MOSFET devices after electrical stress
R. Habchi, C. Salame, A. Khoury, P. Mialhe
Microelectronics Reliability, (2006), available online 14 nov 2006
[3] A faster power MOSFET device with electrical stress treatment
C. Salame, R. Habchi, A. Khoury, P. Mialhe
Microelectronics International 22 (2005) 35-37
Submitted:
[4] Switching times variation of MOSFET devices with temperature and high field stress
R. Habchi, C. Salame, A. Khoury, P. Mialhe
Microelectronics Journal
[5] Characterisation of the gate-source capacitance of MOSFET devices as a function of temperature and high field stress
R. Habchi, C. Salame, A. Khoury, P. Mialhe
Microelectronics Reliability
International conferences
[1] Dependency of Oxide Thickness Effect on the Evolution of n-MOSFET Switching Time with Electrical Stress.
NASA, 8th MAPLD International Conference, Washington D.C. September 7-9, 2005
C. Salame, R. Habchi, A. Khoury, P. Mialhe
[2] Dark I-V Characteristic for the Determination of Carrier Transport Processes in Solar Cells.
20th European Photovoltaic Solar Energy Conference an Exhibition , Barcelona, Spain 6-10 June 2005
H. Toufik, M. El Tahchi, R. Habchi, A. Khoury, P. Mialhe
[3] Switching times of stressed MOSFETs at high temperatures
PCIM Europe 2007, International Exhibition and conference for power electronics intelligent motion power quality, Nuremberg, Germany, 22-24 mai 2007
C. Salame, R. Habchi, P. Mialhe
Missions
- Participation in a TEMPUS project, IMG lb3005-2004, retraining period (teaching of physics and electronics physics), june/july 2005.
- Participation in international conferences on device physics, USA (2005), Spain (2005)
- Participation in a seminar for characterization techniques in the University of Lyon 1, France.
- Missions to Lebanon to install a microelectronics laboratory in the Lebanese University, 2005-2006.
European projects
Member of UPVD contractor staff:
- TEMPUS JEP, IMG (2004-06).
- ERASMUS MUNDUS external cooperation window (2006-07).
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Références
- Pr. Pierre Mialhe
Université de Perpignan / 52 avenue Paul Alduy / 66860 Perpignan cedex
Tel : 04 68 66 17 26 www.semiconductor-upvd.com
e-mail : mialhe@univ-perp.fr
- Pr. Pascale Gall Borrut
IES / UMR 5214 / Université Montpellier II / Place Eugène Bataillon / 34095 Montpellier cedex 05
e-mail : pascale.gall-borrut@ies.univ-montp2.fr
- Pr. Yves Monteil
UMR 56 15 / Université Lyon 1 / 43 bd 11 nov 1918 / 69622 villeurbanne
e-mail : yves.monteil@univ-lyon1.fr
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